Panasonic Switch MA2Z785 MA785 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).  
Schottky Barrier Diodes (SBD)  
MA2Z785 (MA785)  
Silicon epitaxial planar type  
Unit: mm  
1.25 0.1  
0.7 0.1  
For super high speed switching  
For small current rectification  
0.35 0.1  
1
Features  
0 to 0.1  
High-density mounting is possible  
Forward current (Average) IF(AV) = 100 mA rectification is  
possible  
Optimum for high frequency rectification because of its short  
reverse recovery time trr  
Low forward voltage VF and good rectification efficiency  
Reverse voltage VR = 50 V is guaranteed  
2
+0.1  
0.16  
0.5 0.1  
–0.06  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
50  
Unit  
V
1: Anode  
2: Cathode  
EIAJ: SC-76  
SMini2-F1 Package  
Repetitive peak reverse voltage  
Peak forward current  
VRRM  
IFM  
IF(AV)  
IFSM  
50  
V
300  
100  
1
mA  
mA  
A
Marking Symbol: 2E  
Forward current (Average)  
Non-repetitive peak forward  
surge current *  
Junction temperature  
Storage temperature  
Tj  
125  
°C  
Tstg  
55 to +125  
°C  
Note) : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)  
*
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Forward voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
0.55  
30  
Unit  
V
VF  
IR  
IF = 100 mA  
Reverse current  
VR = 50 V  
µA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
Ct  
trr  
VR = 0 V, f = 1 MHz  
25  
IF = IR = 100 mA  
3.0  
Irr = 0.1 IR, RL = 100 Ω  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
3. Absolute frequency of input and output is 200 MHz.  
4. : trr measurement circuit  
*
Bias Application Unit (N-50BU)  
Input Pulse  
Output Pulse  
trr  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr = 0.1 IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs = 50 Ω  
Ri = 50 Ω  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: April 2004  
SKH00038BED  
1
 
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  
 

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