This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB1218A
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SD1819A
+0.10
+0.1
–0.0
0.15
0.3
–0.05
3
■ Features
• High forward current transfer ratio hFE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
(0.65) (0.65)
1.3 0.1
2.0 0.2
■ Absolute Maximum Ratings Ta = 25°C
10°
Parameter
Symbol
Rating
−45
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
1: Base
2: Emitter
3: Collector
−45
V
−7
V
EIAJ: SC-70
SMini3-G1 Package
Collector current
IC
ICP
PC
Tj
−100
−200
150
mA
mA
mW
°C
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Marking Symbol: B
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
−45
−45
−7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
V
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
V
− 0.1
µA
µA
ICEO
−100
hFE
160
460
VCE(sat) IC = −100 mA, IB = −10 mA
− 0.3 − 0.5
V
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
80
MHz
pF
Collector output capacitance
Cob
2.7
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
hFE
160 to 260
BQ
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
SJC00071BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218A
NF IE
NF IE
h Parameter IE
6
5
4
3
2
1
20
VCB = −5 V
VCE = −5 V
f = 270 Hz
Ta = 25°C
VCB = −5 V
Rg = 50 kΩ
f = 1 kHz
Ta = 25°C
Rg = 2 kΩ
Ta = 25°C
hfe
16
12
8
100
10
1
hoe (µS)
f = 100 Hz
1 kHz
10 kHz
hie (kΩ)
4
hre (× 10−4
)
0
0.01
0
0.1
0.1
1
10
1
10
0.1
1
10
(
)
Emitter current IE mA
(
)
(
)
Emitter current IE mA
Emitter current IE mA
h Parameter VCE
hfe
100
hoe (µS)
10
hre (× 10−4
)
hie (kΩ) IE = 2 mA
f = 270 Hz
Ta = 25°C
1
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
SJC00071BED
3
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semiconductors described in this book
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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