This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1820A
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219A
Package
Code
Features
Low collector-emitter saturation voltage VCE(sat)
S-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
SMini3-G1
Pin Name
1. Base
Absolute Maximum Ratings Ta = 25°C
2. Emitter
3. Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
60
Marking Symbol: X
50
V
5
V
500
mA
A
Peak collector current
ICP
1
150
Collector power dissipation
Junction temperature
PC
mW
°C
°C
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
VCBO IC = 10 mA, IE = 0
VCEO IC = 2 mA, IB = 0
VEBO IE = 10 mA, IC = 0
V
V
ICBO
VCB = 20 V, IE = 0
0.1
mA
2
*
hFE1
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
85
40
340
1
Forward current transfer ratio *
hFE2
1
Collector-emitter saturation voltage *
VCE(sat) IC = 300 mA, IB = 30 mA
0.35
200
0.60
15
V
Transition frequency
fT
VCB = 10 V, IE = –50 mA, f = 200 MHz
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
2: Rank classification
*
Rank
hFE1
Q
85 to 170
XQ
R
120 to 240
XR
S
170 to 340
XS
No-rank
85 to 340
X
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date : October 2008
SJC00424AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820A
SMini3-G1
Unit: mm
+0.1
−0.0
+0.10
−0.05
0.3
0.15
3
1
2
(0.65)
(0.65)
1.3 ±0.1
2.0 ±0.2
SJC00424AED
3
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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