This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4627G
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Package
• Code
SSMini3-F3
• Marking Symbol: U
• Pin Name
1. Base
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
30
20
V
3
15
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
125
125
Tstg
−55 to +125
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VEBO
VBE
Conditions
Min
30
3
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
V
VCB = 6 V, IE = −1 mA
720
mV
Forward current transfer ratio *
Transition frequency
hFE
VCB = 6 V, IE = −1 mA
65
160
1.0
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
VCB = 6 V, IE = −1 mA, f = 10.7 MHz
450
650
0.8
MHz
pF
Reverse transfer capacitance
(Common emitter)
Cre
Power gain
PG
NF
VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
dB
Noise figure
VCB = 6 V, IE = −1 mA, f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
C
hFE
65 to 160
Publication date: June 2007
SJC00391AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 0.05
(5°)
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