This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A
Features
Package
Large collector current IC
Code
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Mini3-G1
Pin Name
1: Base
Absolute Maximum Ratings Ta = 25°C
2: Emitter
3: Collector
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-60
Unit
V
Marking Symbol: D
V
-50
V
-5
A
- 0.5
-1
Peak collector current
ICP
A
Collector power dissipation
Junction temperature
PC
200
mW
°C
°C
Tj
150
Storage temperature
T
stg
-55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
-60
-50
-5
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO IC = -10 mA, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO IE = -10 mA, IC = 0
V
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = -20 V, IE = 0
- 0.1
mA
2
*
hFE1
hFE2
VCE = -10 V, IC = -150 mA
VCE = -10 V, IC = -500 mA
85
40
340
1
Forward current transfer ratio *
1
Collector-emitter saturation voltage *
VCE(sat) IC = -300 mA, IB = -30 mA
V
- 0.35 - 0.60
1
Base-emitter saturation voltage *
VBE(sat) IC = -300 mA, IB = -30 mA
V
-1.1
-1.5
Transition frequency
fT
VCB = -10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
hFE1
Q
85 to 170
DQ
R
120 to 240
DR
S
170 to 340
DS
No-rank
85 to 340
D
Marking symbol
Product of no-rank is not classified and have no indication for rank.
Publication date: October 2008
SJC00413AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0710A
Mini3-G1
Unit: mm
+0.10
−0.05
0.40
+0.10
−0.05
0.16
3
2
1
(0.95)
(0.95)
1.9 ±0.1
+0.20
−0.05
2.90
SJC00413AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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