This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
Complementary to 2SC6054J
+0.05
–0.03
1.60
+0.03
–0.01
0.12
1.00±0.05
Features
3
High forward current transfer ratio hFE
SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
1
2
0.27±0.02
(0.50)(0.50)
Absolute Maximum Ratings Ta = 25°C
5°
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−60
Unit
V
V
−50
V
−7
1: Base
2: Emitter
mA
mA
mW
°C
−100
−200
3: Collector
SSMini3-F1 Package
Peak collector current
ICP
Marking Symbol: 7L
Collector power dissipation
Junction temperature
PC
125
Tj
125
Storage temperature
T
stg
−55 to +125
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
−60
−50
− 7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO IC = −10 µA, IE = 0
VCEO IC = −2 mA, IB = 0
VEBO IE = −10 µA, IC = 0
V
V
ICBO
ICEO
hFE
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
− 0.1
−100
460
µA
µA
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −100 mA, IB = −10 mA
V
− 0.2
− 0.5
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Collectoroutputcapacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
2.2
pF
(Commonbase, inputopencircuited)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2005
SJC00342AED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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