NXP Semiconductors Switch PIP3119 P User Manual

Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3119-P  
DESCRIPTION  
QUICK REFERENCE DATA  
Monolithic temperature and  
overload protected logic level power  
MOSFET in TOPFET2 technology  
assembled in a 3 pin plastic  
package.  
SYMBOL  
PARAMETER  
MAX.  
UNIT  
VDS  
ID  
PD  
Tj  
Continuous drain source voltage  
Continuous drain current  
50  
20  
V
A
Total power dissipation  
90  
W
Continuous junction temperature  
150  
˚C  
APPLICATIONS  
RDS(ON)  
IISL  
Drain-source on-state resistance  
28  
mΩ  
General purpose switch for driving  
Input supply current  
VIS = 5 V  
650  
µA  
lamps  
motors  
solenoids  
heaters  
FEATURES  
FUNCTIONAL BLOCK DIAGRAM  
TrenchMOS output stage  
Current limiting  
Overload protection  
DRAIN  
Overtemperature protection  
Protection latched reset by input  
5 V logic compatible input level  
Control of output stage and  
supply of overload protection  
circuits derived from input  
Low operating input current  
permits direct drive by  
O / V  
CLAMP  
POWER  
INPUT  
MOSFET  
RIG  
micro-controller  
ESD protection on all pins  
Overvoltage clamping for turn  
off of inductive loads  
LOGIC AND  
PROTECTION  
SOURCE  
Fig.1. Elements of the TOPFET.  
PINNING - SOT78B  
PIN CONFIGURATION  
SYMBOL  
mb  
mb  
PIN  
1
DESCRIPTION  
D
S
TOPFET  
input  
drain  
2
I
P
3
source  
tab drain  
1
2
3
Front view  
MBL292  
May 2001  
1
Rev 1.000  
 
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3119-P  
OUTPUT CHARACTERISTICS  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified  
SYMBOL PARAMETER  
Off-state  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VIS = 0 V  
V(CL)DSS  
Drain-source clamping voltage ID = 10 mA  
IDM = 4 A; tp 300 µs; δ ≤ 0.01  
VDS = 40 V  
50  
50  
-
-
V
V
60  
70  
IDSS  
Drain source leakage current  
-
-
-
100  
10  
µA  
µA  
Tmb = 25˚C  
0.1  
On-state  
VIS 4.4 V; tp 300 µs; δ ≤ 0.01  
RDS(ON)  
Drain-source resistance  
IDM = 10 A  
-
-
-
22  
52  
28  
mΩ  
mΩ  
Tmb = 25˚C  
OVERLOAD CHARACTERISTICS  
VIS = 5 V; Tmb = 25˚C unless otherwise specified.  
SYMBOL PARAMETER  
Short circuit load  
CONDITIONS  
MIN. TYP. MAX. UNIT  
ID  
Drain current limiting  
VDS = 13 V  
28.5  
21  
43  
-
57  
65  
A
A
4.4 V VIS 5.5 V;  
-40˚C Tmb 150˚C  
Overload protection  
PD(TO)  
TDSC  
Overload power threshold  
Characteristic time  
device trips if PD > PD(TO)  
75  
200  
185  
380  
250  
600  
W
µs  
which determines trip time1  
Overtemperature protection  
Tj(TO)  
Threshold junction  
temperature2  
150  
170  
-
˚C  
1 Trip time td sc varies with overload dissipation PD according to the formula td sc TDSC / ln[ PD / PD(TO)].  
2 This is independent of the dV/dt of input voltage VIS.  
May 2001  
3
Rev 1.000  
 
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3119-P  
INPUT CHARACTERISTICS  
The supply for the logic and overload protection is taken from the input.  
Limits are for -40˚C Tmb 150˚C; typicals are for Tmb = 25˚C unless otherwise specified  
SYMBOL PARAMETER  
VIS(TO) Input threshold voltage  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VDS = 5 V; ID = 1 mA  
0.6  
1.1  
-
2.4  
2.1  
V
V
Tmb = 25˚C  
1.6  
IIS  
Input supply current  
Input supply current  
normal operation;  
protection latched;  
VIS = 5 V  
VIS = 4 V  
100  
80  
220  
195  
400  
330  
µA  
µA  
IISL  
VIS = 5 V  
VIS = 3 V  
200  
130  
400  
250  
650  
430  
µA  
µA  
VISR  
tlr  
Protection reset voltage1  
Latch reset time  
reset time tr 100 µs  
VIS1 = 5 V, VIS2 < 1 V  
II = 1.5 mA  
1.5  
10  
5.5  
-
2
40  
-
2.9  
100  
8.5  
-
V
µs  
V
V(CL)IS  
RIG  
Input clamping voltage  
Input series resistance2  
Tmb = 25˚C  
33  
kΩ  
to gate of power MOSFET  
SWITCHING CHARACTERISTICS  
Tmb = 25˚C; VDD = 13 V; resistive load RL = 4 . Refer to waveform figure and test circuit.  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
td on  
tr  
td off  
tf  
Turn-on delay time  
Rise time  
VIS = 5 V  
-
-
-
-
25  
50  
60  
50  
50  
µs  
µs  
µs  
µs  
100  
120  
100  
Turn-off delay time  
Fall time  
VIS = 0 V  
1 The input voltage below which the overload protection circuits will be reset.  
2 Not directly measureable from device terminals.  
May 2001  
4
Rev 1.000  
 
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3119-P  
MECHANICAL DATA  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads  
SOT78B  
E
p
A
1
A
p  
1
q
mounting  
base  
(2)  
D
1
D
L
L
2
1
Q
b
1
L
1
2
3
(1)  
b
w
M
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
max.  
b
e
A
b
D
E
L
2
D
L
p
1
A
c
UNIT  
p  
q
Q
w
1
1
1
1
4.5  
4.1  
1.39  
1.27  
0.85  
0.60  
1.3  
1.0  
0.7  
0.4  
15.8  
15.2  
6.4  
5.9  
10.3  
9.7  
15.0  
13.5  
3.30  
2.79  
3.8  
3.6  
4.3  
4.1  
3.0  
2.7  
2.6  
2.2  
mm  
0.4  
3.0  
2.54  
Notes  
1. The positional accuracy of the terminals is controlled within zone L max.  
1
2. Mounting base configuration is not defined within the dimensions E and D  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
01-02-22  
SOT78B  
Fig.2. SOT78B (TO220AB) package1, pin 2 connected to mounting base.  
1 Refer to mounting instructions for SOT78 (TO220) envelopes. Epoxy meets UL94 V0 at 1/8". Net mass: 2 g  
May 2001  
5
Rev 1.000  
 
Philips Semiconductors  
Product specification  
Logic level TOPFET  
PIP3119-P  
DEFINITIONS  
DATA SHEET STATUS  
DATA SHEET  
STATUS1  
PRODUCT  
DEFINITIONS  
STATUS2  
Objective data  
Development  
This data sheet contains data from the objective specification for  
product development. Philips Semiconductors reserves the right to  
change the specification in any manner without notice  
Preliminary data  
Qualification  
Production  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in ordere to improve the design and supply the best possible  
product  
Product data  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in  
order to improve the design, manufacturing and supply. Changes will  
be communicated according to the Customer Product/Process  
Change Notification (CPCN) procedure SNW-SQ-650A  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 2001  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
1 Please consult the most recently issued datasheet before initiating or completing a design.  
2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is  
May 2001  
6
Rev 1.000  
 

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